Non-Volatile Memory With Silicided Bit Line Contacts

ABSTRACT

An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A farther benefit of the approach is that the bit line contact implant and rapid temperature anneal process can be eliminated. This approach is applicable to embedded flash, integrating high density devices and advanced logic processes.

BACKGROUND

1. Field

This invention relates generally to memory fabrication, and moreparticularly to a semiconductor processing method for flash memoryfabrication.

2. Background Art

The semiconductor market has been undergoing extensive growth over thepast few decades. This trend is expected to continue for the foreseeablefuture since a large portion of this market is the memory segment. Thememory segment can be broadly categorized into two classes, namelyvolatile memory and non-volatile memory. Volatile memory such as SRAMand DRAM lose their data content when the power supply is removed. Incontrast, non-volatile memories such as EEPROM and flash memoriesmaintain their data content after the power supply has been removed.

Non-volatile memories offer particular advantages, and thereby support awide range of applications including computer, automotive and consumerelectronic devices. Flash memory is a non-voltage memory that can beelectrically erased and reprogrammed. In fact, flash memory hasundergone an explosive market growth that has in particular been drivenby cellular telephones, memory cards, flash drives and other types ofportable data storage devices. Indeed, with the need to supportpersistent data storage in portable devices, it is clear that the flashmemory will continue to grow at an ever increasing rate. Further, themarket place will demand flash memory designs that support lower costand higher performance, including higher densities of storage.

The basic concept of a flash memory cell is that of a floating gate in ametal oxide semiconductor transistor. The floating gate serves as acharge storage layer, and a nitride layer can be used to form thefloating gate. The electrical isolation of the floating gate isaccomplished by surrounding the gate with dielectric material, such anoxide. Typically, flash memory cells use two oxide layers, a “bottom”oxide layer and a “top” oxide layer, to form a sandwich around thefloating gate in the form of a dielectric stack. Because of the use ofoxide layers and a nitride layer, the dielectric stack is commonlyreferred to as an oxide-nitride-oxide (or ONO) layer.

Data in the memory cell array is accessed by application of voltages tobit lines and word lines. The bit lines are formed on the semiconductorsubstrate and function as a source and a drain with an active channelregion defined therebetween. The oxide-nitride-oxide (ONO) dielectriclayer is formed on the top of the substrate and bit lines. The wordlines are then formed on the top of the ONO layer, and perpendicular tothe bit lines. Applying a voltage to the word line, which acts as acontrol gate, along with an applied voltage to the bit line allows forthe reading or writing of data from or to that location in the memorycell array.

Between a predetermined number of word lines, conductive vias cantraverse the dielectric stack to establish electrical contact to the bitlines. For bit lines made from n+-type conductivity silicon, sets ofvias (one via for each bit line) can be placed at intervals of abouteight to about sixteen word lines. To reduce the resistivity of theconnections to the memory devices, metal silicides can be formed on thesurface of electrically conductive structures (e.g., bit lines) of thememory devices.

BRIEF SUMMARY

While silicides are useful for reducing the resistivity in structures inmemory devices, the formation of suicides can interfere with theoperation of the devices due to undesirable substrate leakage. Inparticular, the requirement of small features with close spacing betweenadjacent features in high density memory devices requires a solution tothe undesirable substrate leakage problem. In view of the foregoing,there is a need for a solution to the undesirable substrate leakageproblem in silicided contact formation with small features with closespacing between adjacent features in high density memory devices. Inparticular, there is a need for such a solution in the formation ofsilicided bit line structures.

In one embodiment, a memory array is formed having a plurality of chargetrapping dielectric memory devices. The charge trapping dielectricmemory devices have a substrate with a first bit line and a second bitline formed therein and a body region interposed between the first andthe second bit lines. The memory devices further have a first dielectriclayer disposed on the body region, a dielectric charge trapping layerdisposed on the first dielectric layer, and a second dielectric layerdisposed on the dielectric charge trapping layer, the first dielectriclayer and the dielectric charge trapping layer extending beyond thesecond dielectric layer in a direction parallel to a top surface of thesubstrate.

In one embodiment, a method is described that includes the steps ofdisposing a first dielectric layer on a substrate, disposing adielectric charge trapping layer on the first dielectric layer,disposing a second dielectric layer on the dielectric trapping layer,patterning a hard mask on the second dielectric layer, disposing anoxide spacer on sidewalls of the hard mask to leave exposed a bit linecontact region, removing portions of the second dielectric layer,dielectric trapping layer and first dielectric layer beneath the bitline contact region, removing portions of the oxide space sidewalls toleave exposed a portion of the second dielectric layer, and removing theexposed portion of the second dielectric layer to thereby yield extendedportions of the dielectric trapping layer and first dielectric layer.

In one embodiment, a memory device is described that has a firstdielectric layer disposed on a substrate, a dielectric charge trappinglayer disposed on the first dielectric layer, and a second dielectriclayer disposed on the dielectric charge trapping layer, the firstdielectric layer and the dielectric charge trapping layer extendingbeyond the second dielectric layer in a direction parallel to a topsurface of the substrate.

The features and advantages of the current invention will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements. The drawing in which an elementfirst appears is indicated by the leftmost digit(s) in the correspondingreference number.

BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES

The accompanying drawings, which are incorporated herein and form partof the specification, illustrate the present invention and, togetherwith the description, further serve to explain the principles of theinvention and to enable a person skilled in the relevant art(s) to makeand use the invention.

FIG. 1 illustrates a block diagram of a memory cell array structure, inaccordance with an embodiment of the current invention.

FIG. 2 illustrates a schematic block diagram of a portion of a memoryarray formed in accordance with an embodiment of the current invention;

FIG. 3 illustrates a schematic cross-section illustration of exemplarymemory devices from the memory array taken along the line 3-3 of FIG. 2;

FIG. 4 illustrates a schematic cross-section illustration of anexemplary bit line contact region from the memory array taken along theline 4-4 of FIG. 2;

FIG. 5 illustrates a patterned. SiRN hard mask and poly-silicon layer,in accordance with an embodiment of the current invention;

FIG. 6 illustrates the pocket impact and rapid thermal anneal processsteps, in accordance with an embodiment of the current invention;

FIG. 7 illustrates the bit line oxide spacer deposition and ONO etchprocess steps, in accordance with an embodiment of the currentinvention;

FIG. 8 illustrates the bit line implant and rapid thermal anneal processsteps, in accordance with an embodiment of the current invention;

FIG. 9 illustrates the bit line oxide fill, polishing and hard mask etchprocess steps, in accordance with an embodiment of the currentinvention;

FIG. 10 illustrates the formation of word line and LDD spacer processsteps, in accordance with an embodiment of the current invention;

FIG. 11 illustrates the oxide wet etch process and bit line contact areaformation process steps, in accordance with an embodiment of the currentinvention;

FIG. 12 illustrates a silicide formation in the bit line contact area,in accordance with an embodiment of the current invention;

FIG. 13 illustrates a silicide formation in the bit line contact areahaving a trench, in accordance with an embodiment of the currentinvention;

FIG. 14 illustrates a method of fabrication of a memory flash memorycell structure with an extended nitride-oxide layer to prevent leakageof silicide bit line contacts, in accordance with an embodiment of thecurrent invention;

The features and advantages of the present invention will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements. The drawing in which an elementfirst appears is indicated by the leftmost digit(s) in the correspondingreference number.

DETAILED DESCRIPTION OF THE INVENTION

This specification discloses one or more embodiments that incorporatethe features of this invention. The disclosed embodiment(s) merelyexemplify the invention. The scope of the invention is not limited tothe disclosed embodiment(s). The invention is defined by the claimsappended hereto.

The embodiment(s) described, and references in the specification to “oneembodiment,” “an embodiment,” “an example embodiment,” etc., indicatethat the embodiment(s) described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases are not necessarily referring to the same embodiment.Further, when a particular feature, structure, or characteristic isdescribed in connection with an embodiment, it is understood that it iswithin the knowledge of one skilled in the art to effect such feature,structure, or characteristic in connection with other embodimentswhether or not explicitly described.

FIG. 1 illustrates a block diagram of a memory cell array structure, inaccordance with an embodiment of the current invention. Referring toFIG. 1, a memory cell array may be a charge-trapping NAND (CT-NAND)memory cell array 100. However, it is appreciated that embodiments ofthe present technology may be applied to any charge-trapping FET(CT-FET) device. In one implementation, each column of CT-FETs may beseparated by a shallow trench isolation (STI) region 105. Each CT-FETmay include a drain region 110, a source region 115, a channel region120, a tunneling dielectric layer 125 (also commonly referred to as abottom dielectric layer), a charge trapping layer 130, a blockingdielectric layer 135 (also commonly referred to as a top dielectriclayer), and a gate region 140. The source and drain regions 110, 115 maybe semiconductor regions of the substrate 145 having a heavy dopingconcentration of a first type of impurity. In one implementation, thesource and drain regions 110, 115 may be silicon heavily doped withphosphorous or arsenic.

Persons of ordinary skill in the relevant arts will also recognizealternative materials can also be used, and fall within the scope of thecurrent invention. The channel region 120 may be a semiconductor regionof the substrate 145 having moderate doping concentration of a secondtype of impurity, disposed laterally between the source and drainregions 110, 115. In one implementation, the channel region 120 may besilicon moderately doped with boron. The tunneling dielectric layer 125may be a dielectric layer disposed on the channel region 120 andadjacent portions of the source and drain regions 110, 115. In oneimplementation, the tunneling dielectric layer 125 may be silicon oxide,oxynitride, silicon oxynitride, or the like layer. The charge trappinglayer 130 may be a dielectric, semiconductor or the like layer disposedbetween the tunneling dielectric layer 125 and the blocking dielectriclayer 135. In one implementation, the charge trapping layer 130 may be anitride, silicon-rich-nitride, or the like layer. The blockingdielectric layer 135 may be a dielectric layer disposed between thecharge trapping layer 130 and the gate region 140. In oneimplementation, the blocking dielectric layer 135 may be a siliconoxide, oxynitride, silicon oxynitride, or the like layer. The gateregion 140 may be a semiconductor or a conductor layer disposed on theblocking dielectric layer 135 opposite the charge trapping layer 130. Inone implementation, the gate region 140 may be a polysilicon layerhaving a heavy doping concentration of the first type of impurity.

Although FIG. 1 illustrates a CT-NAND memory cell array, embodiments ofthe present invention apply equally well to other forms of flash memory,such as NOR flash memory (including floating gate and dual bit (soldunder the trademark MirrorBit®) implementations). Subsequentillustrations will use a NOR flash memory cell array as an exemplaryillustration of the various aspects of the present invention. As wouldbe understood by one of ordinary skill in the art, aspects of thepresent invention can be directed to any situation involving the use ofsilicided contacts whereby extended adjacent layers can be used toprovide superior spatial control of the formation of the silicidedcontacts.

FIG. 2 illustrates a top view schematic block diagram of a portion, orsector, of a memory array 210 that is used to form a memory unit. Thememory array 210 can include a plurality of memory devices 220. Thememory unit can also include a logic circuit (not shown) for use incontrolling various operations (e.g., programming, reading and/orerasing) of the memory array 210. The memory unit can also includeexternal (or static) references (not shown) for using in generatingvarious reference currents, such as an erase verify reference, asoft-program verify reference and a program verify reference. As oneskilled in the art will appreciate, the memory devices 220 can be usedby a customer of the memory unit to store information, such as data orexecutable code.

The memory array 210 can include a plurality of word lines 240 (alsoreferred to as gate lines) and bit lines 260. The word lines 240 aredisposed on and separated from the bit lines 260 by a dielectric stack280 in a grid arrangement (e.g., the word lines 240 are disposed in atransverse direction to the bit lines 260). The word lines 240, the bitlines 260 and the dielectric stack 280 are operatively arranged to formthe memory devices 220. Although not described in great detail herein,some of the memory devices 220 can be used as dynamic reference devicesto assist in reading the remaining memory devices 220 by tracking driftin threshold voltage of the memory devices 220 over multipleprogram/erase (P/E) cycles and aging of the memory unit.

Application of appropriate voltages to the word lines 240 and the bitlines 260 allows for the addressing of the memory devices 220 of thememory array 210 such that each memory device 220 can be programmed,read, verified and/or erased. Bit line contact assemblies 290 can beused to establish electrical connection to the bit lines 260 through thedielectric stack 280.

FIG. 3 illustrates a cross-section of a portion of the memory array 210.It should be understood that the illustrated memory devices 220 areshown for exemplary purposes and can be implemented with alternativestructures (e.g., stacked gate arrangement, recessed gate arrangement,etc.). The exemplary memory devices 220 are implemented as chargetrapping dielectric type flash memory devices, each of which include apair of complementary charge trapping regions 320 a, 320 b that can beindependently programmed and read.

In the illustrated embodiment, the memory device 220 is fabricated on asemiconductor substrate 340 having p-type conductivity. In oneembodiment, the substrate 340 can be formed from silicon (Si). Withinthe substrate 340, the bit lines 260 a, 260 b, 260 c are formed in aburied bit line format. The bit lines 260 a, 260 b, 260 c (whichfunction as conductive regions) can be formed by implanting n-typedopant into the substrate 340. In one embodiment, the bit lines 260 a,260 b, 260 c have n+-type conductivity. Although not illustrated, anitride layer can be formed at least partially on the bit lines 260 a,260 b, 260 c and p+-type pocket implants can be added adjacent the bitlines 260 a, 260 b, 260 c.

For each memory device 220, adjacent pair of bit lines 260 a, 260 b, 260c form conductive regions that function as a source and a drain duringvarious programming and reading operations. For each device, a bodyregion 360 is disposed between the adjacent pairs of bit lines 260 a,260 b, 260 c.

Above the substrate 340 is the dielectric stack 280, also known as theONO (oxide-nitride-oxide) layers. The dielectric stack 280 includes abottom dielectric layer 380 (also referred to as a tunneling dielectriclayer) that is made from, for example, silicon oxide (e.g., SiO₂) orother suitable material.

On top of the bottom dielectric layer 380 is a charge trapping layer 310(also referred to as a charge storing layer). The charge trapping layer310 can be made from, for example, a non-conductive dielectric materialsuch as silicon nitride (Si₃N₄) or other suitable material.

On top of the charge trapping layer 310 is another dielectric layer(also referred to as a top dielectric layer 330) made from a materialsuch as, for example, silicon oxide (e.g., SiO₂) or other suitablematerial. Alternative materials for the dielectric layers 380 and 330can include high-K dielectric materials (e.g., dielectric materialshaving a relative permittivity greater than the relative permittivity ofsilicon oxide).

The word lines 240 are formed on the top dielectric layer 330. For eachmemory device 220, one of the word lines 240 functions as a gateelectrode 350 that, in part, controls a channel 370 interposed betweenthe adjacent pairs bit lines 260 a, 260 b, 260 c. In alternativearrangements, the gate electrodes 350 can be formed from interconnectedislands or pads. A work function of the word line 240 and the dielectricstack 280, in part, controls the channel 370 (e.g., inversion ordepletion state) within the body region 360. Each word line 240 caninclude a highly conductive layer 390 formed on the upper surface of theword lines 240. For example, the conductive layer 390 can be formed froma silicide, such as CoSi_(x).

Disposed on the bit lines 260, the dielectric stack 280 can includedielectric regions 400. Dielectric regions 400 can assist in fillingvoids formed in the tunnel dielectric layer 380, the charge trappinglayer 310 and the top dielectric layer 330. The voids are formed as partof a method for fabricating the memory array and to assist in bit line260 implantation by serving as bit line 260 implant windows.

FIG. 4 illustrates a schematic cross-sectional view of an exemplary bitline contact region from the memory array 210. Each bit line contactregion can include a bit line contact assembly 290 that can be used toestablish electrical connection to the corresponding bit line 260through the layer 400.

The bit line contact assembly includes a conductive via 420 thatvertically traverses the dielectric region 400 for establishing electionconnection between an interconnect (not shown) and the bit line 260. Thebit line contact assembly 290 can also include a metalized portion 440of the bit line 260. The metalized portion 440 can be formed from asilicide material, such as the result of reacting a metal (e.g., cobalt,molybdenum, titanium, nickel, and the like) with the silicon of the bitline 260. This metalized portion 440 of the bit line 260 can reduce bitline 260 resistance (e.g., cobalt-silicon having a resistance of aboutfive ohms/cm² to about twelve ohms/cm²). Accordingly, sets of bit linecontact assemblies 290 can be spaced apart by a higher number of wordlines 240 than found in conventional memory arrays. For example, sets ofbit line contact assemblies 290 (one bit line contact assembly 290 foreach bit line 260) can be placed at placed at intervals of about 128 toabout 256 word lines. In the illustrated embodiment, the metalizedportions 440 extend vertically downward from an upper surface of thesubstrate 340 a distance less than the junction depth (described ingreater detail below) of the bit lines 260. In another embodiment, themetalized portions 440 extend vertically downward from an upper surfaceof the substrate 340 a distance that coincides with the junction depthof the bit lines 260 or is deeper than the bit lines 260.

As will become more apparent from the discussion below, within thecharge trapping layer 310, the memory device 220 includes the firstcharge trapping region 320 a adjacent one of the conductive regions(e.g., the bit line identified as bit line 260 a) and the second chargetrapping region 320 b (also referred to herein as a complementary cell,a left-hand bit or a second charge trapping region) adjacent the otherof the conductive regions (e.g., the bit line identified as bit line 260b).

Each charge trapping regions 320 a, 320 b can independently have twodata states. The data states can represent binary values such as alogical zero and a logical one. The logical one, for example, can beimplemented by leaving the desired charge trapping region 320 in anunprogrammed state or blank program level. The logical zero, forexample, can be implemented by storing an amount of charge in thedesired charge trapping region 320. This condition is also referred toas a charged state, a programmed state, a programmed level or a chargedprogram level.

In the illustrated embodiment, the memory device 220 is a structurallysymmetrical device allowing for programming, verifying, reading anderasing of the first charge trapping region 320 a and the second chargetrapping region 320 b by respectively switching the roles of the bitlines 260 a and 260 b (source and drain) during those operations.Therefore, the bit lines 260 a, 260 b will be referred tointerchangeably by the terms source and drain, depending on the chargetrapping region 320 of interest.

The individual cells of memory device 220 can be programmed as follows.The first charge trapping region 320 a can be programmed to the chargedprogram level by applying a voltage potential (e.g., about three voltsto about six volts) to the bit line 260 a (functioning as the drain) anda voltage potential (e.g., about eight volts to about ten volts) to theword line 240 (functioning as the gate electrode 350). The other bitline 260 b functions as the source (i.e., source of electrons) for thechannel hot electron programming of the charge trapping region 320 a. Inone embodiment, a bias voltage potential is also applied to the source(rather than grounding or floating the source as found in conventionalcharge trapping dielectric flash memory devices). As a result of theapplication of a bias potential to the source during programming,greater control over electron injection can be accomplished, which leadsto enhanced data retention capability of the memory device 220.

The voltages applied to the gate electrode 350, the source and the draingenerate a vertical electric field through the dielectric layers 380,330 and the charge trapping layer 310 and a lateral electric field alongthe length of the channel 370 from the source to the drain. At a giventhreshold voltage, the channel 370 will invert such that electrons aredrawn off the source and begin accelerating toward the drain. As theelectrons move along the length of the channel 370, the electrons gainenergy and upon attaining enough energy, the electrons are able to jumpover the potential barrier of the bottom dielectric layer 380 and intothe charge trapping layer 310 where the electrons become trapped. Theprobability of electrons jumping the potential barrier is a maximum inthe area of the charge trapping region 320 a adjacent the drain (i.e.,bit line 260 a), where the electrons have gained the most energy. Theseaccelerated electrons are termed “hot electrons” and once injected intothe charge trapping layer 310, tend to stay in the charge trappingregion 390 of the charge trapping layer 310. The trapped electrons tendnot to spread through the charge trapping layer 310 due to this layer'slow conductivity and low lateral electric field therein. Thus, thetrapped charge remains localized in the charge trapping region of thecharge trapping region 320 a close to the adjacent bit line 260 a.

The foregoing technique to program the first charge trapping region 320a can be used to program the second charge trapping region 320 b, butthe functions of the bit lines 260 a and 260 b (i.e., source and drain)are reversed.

The individual cells of memory device 220 can be read as follows.Reading of the charge trapping regions 320 of the memory device 220 canbe carried using, for example, a reverse read operation. For example, toread the first charge trapping region 320 a, a voltage potential (e.g.,about 1.3 volts to about two volts) can be applied to the conductiveregion opposite the first charge storing region 320 a (i.e., bit line260 b, which is also referred to as the drain during read operations)and a voltage potential (e.g., about 4.5 volts to about 5.5 volts) canbe applied to the word line 240 (function as the gate electrode 350).The conductive region adjacent the first charge storing region 320 a(i.e., bit line 260 a, which is also referred to as the source duringread operations) can be grounded. To read the second charge trappingregion 320 b, the roles of the conductive regions can be reversed. Theread operation drain voltage functions to mask, or “cover up,” chargestored by the “unread” charge trapping region 320. During the readoperation of the memory device 220 an amount of current drawn across thechannel 370 can be compared against a reference current to determine thedata state of the “read” one of the charge trapping regions 320.

As noted earlier, the demand for high density memory devices results inthe requirement of small features with close spacing between adjacentfeatures in high density memory devices. Bit line silicide contactregions are one of these small features, and it is required that thesebit line silicide contact regions be formed without shorting or leakingto the substrate. Embodiments in accordance with the present inventionuse bit line oxide spacers to create an extended ONO foot, whichprevents the bit line silicide contacts from shorting to the substrate.The silicide formation occurs only in the bit line contact region and isself-aligned to the ONO nitride edges. No bit line silicide can beformed between two neighboring word-lines because the lightly dopeddrain (LDD) spacer fills up the word-line spacing area.

FIG. 5 illustrates a partially formed memory device, in accordance withan embodiment of the present invention. At this stage of thesemiconductor manufacturing process, the ONO layers 520, 530, 540 havebeen formed on the silicon substrate 510. Subsequent to the formation ofthe ONO layers 520, 530, 540, a poly-silicon layer 550 is formed on topof the ONO layers 520, 530, 540. Following the formation of thepoly-silicon layer 550, a silicon-rich-nitride (SiRN) hardmask 560, 570is deposited on the poly-silicon layer 550. The SiRN hardmask 560, 570is patterned using conventional lithography and dry etch techniques, asunderstood by one of ordinary skill in the art. As can be readilyinferred from FIG. 5, the poly-silicon layer 550 now contains aprotected portion underneath SiRN hardmask 560, 570 and an unprotectedportion (i.e., exposed poly-silicon layer) that is exposed to subsequentprocessing. Following the formation and patterning of the SiRN hardmask560, 570, an appropriate poly-silicon etch is used to remove the exposedpoly-silicon layer. The poly-silicon etch stops on the top oxide layer540 of the ONO layers 520, 530, 540. Thus, the presence of SiRN spacer570 is used to define the bit line opening for subsequent processingsteps.

FIG. 6 illustrates the next step in the semiconductor manufacturingprocess, namely the pocket implant and annealing portion of the process.The first step involves the formation of pocket implants that arelocated in the semiconductor substrate under the side surfaces of thepoly-silicon structures 550. Pocket implants enable control of thresholdvoltages of the memory cells. Pocket implants typically contain animplanted p-type material, such as boron. These pocket implants can beformed in the semiconductor substrate 510 by any suitable technique. Forexample, such dopants can be implanted at various energy levels, e.g., 3keV to 30 keV, with doses in the range, e.g., 10¹² atoms/cm² to 5×10¹⁵atoms/cm². The pocket implants can be formed using implantation of thedopant(s) at an angle with respect to the top surface of thesemiconductor substrate 510. The dopants pass through the openings 580between the poly-silicon structures 550 and are implanted adjacent toand to a certain degree under portions of the ONO layers 540, 530, 520depending upon the angle of implantation. Dopants can be implanted at anangle of about 5 degrees or more and about 40 degrees or less relativeto the surface of the semiconductor substrate 510. The resulting depthof implants in substrate 510 can be, for example, 15 nm. The dimensions,angles, energy levels and dopant types are exemplary, and are notlimiting to the disclosure. Following the exemplary pocket implantprocess, a rapid thermal anneal (RTA) process is applied to annealimplant damages and to thereby suppress transient enhanced diffusion(TED).

FIG. 7 illustrates the next step in the semiconductor manufacturingprocess, namely the formation of spacers 780 adjacent the side surfaceof the features 770, 750 and on a portion of ONO layers 720, 730, 740.Spacers 780 serve as a mask when subsequently forming the bit lines andassociated structures. Spacers 780 can contain any suitable material sothat the spacers 780 can serve as a mask for protecting a coveredportion (e.g., a covered portion of ONO layers 720, 730, 740) of thesemiconductor substrate 510 when forming the bit lines and associatedstructures in the semiconductor substrate 510 in subsequent processes.In other words, the spacer material can be selected so that there isetch selectivity between the ONO layers 720, 730, 740 and semiconductorsubstrate 510 and spacer 780. Thus, the material of spacers 780 andsemiconductor substrate 510 would have a lower etch rate than the ONOlayers 720, 730, 740 in a subsequent etching process. For example, anetching rate of an oxide material or silicon material is substantiallyslower than an etching rate of the ONO layers 720, 730, 740 with respectto an ONO etchant. Accordingly, in one embodiment, spacers 780 containan oxide material. Examples of oxides include tetraethylorthosilicate(TEOS) oxide, high temperature oxides (HTO), atomic layer deposition(ALD) and the like. Other examples of spacer materials could includenitrides (e.g., silicon nitride, silicon oxynitride, and silicon richsilicon nitride), silicates, diamond-like carbon, carbide, and the like.An ONO etch is used that stops on the SiRN hardmask 760 and spacer 780,but etches down through the ONO layers through to silicon substrate 510.

FIG. 8 illustrates the next steps in the semiconductor manufacturingprocess, as follows. After forming spacers 780, the bit line implantprocess takes place using three steps, two of these three steps involvebit line implants, while the third step is an intermediate etching step.With respect to the bit line implant steps, any suitable implantcompositions and concentrations can be employed for the bit line implantregion 890. For example, the bit line implant region 890 include one ormore n-type dopants (e.g., arsenic, phosphorous, antimony). The dopantspass through the bit line opening 710 between the spacers 880 and areimplanted into the semiconductor substrate 510 under the bit lineopening 710. Thus, in the bit line implant process, SiRN hard mask 860and spacers 880 can serve as an implant screen. That is, the spacer isused to offset the implants and spacers can constrain the implant into anarrower implant region.

With respect to first bit line implant process, spacers 880 can permitthe use of higher energy and higher dose without suffering device shortchannel roll off issues. Spacers 880 can tolerate a higher energy bitline implant without resulting in too wide a bit line. A higher energybit line implant can form deeper bit line junction and can effectivelyblock the hot electron move to the adjacent cell and thereby preventtransient program disturbances (TPD). Transient program disturbances(TPD) are unwanted, and occur when hot electrons generated duringprogramming a memory cell reach adjacent memory cells and disturbprogramming the adjacent memory cells. As noted above, the first bitline implant process typically uses an n-type material, such as arsenic,phosphorous, antimony, and the like. In an exemplary process step, anarsenic dopant can be implanted at various energy levels, e.g., 40 keVto 50 keV, with doses in the range, e.g., 1×10¹⁵ atoms/cm² to 1.5×10¹⁵atoms/cm².

Following the first bit line implant process, the intermediate etchingstep is used to reduce the spacer 880 width prior to the second bit lineimplant process. In an exemplary process, an oxide wet etch can be usedto reduce the thickness of the oxide spacer 880. In addition to reducethe thickness of the oxide spacer 880, the oxide wet etch will alsocommensurately etch back the top oxide layer 840 of the ONO stack 820,830, 840.

Following the oxide wet etch, the second bit line implant process isapplied. In contrast to the first bit line implant process, the secondbit line implant process uses lower energy and therefore shallower, andalso results in implantation beneath the extended NO layers 820, 830.Subsequent to second bit line implant process, a rapid thermal anneal(RTA) process is applied to repair implant damages and to thereby reducethe ill effects of transient enhanced diffusion (TED). As in the firstbit line implant process, the second bit line implant process uses thesame material, e.g., an n-type material, such as arsenic, phosphorous,antimony, and the like. In an exemplary method to provide the second bitline implant process step, an arsenic dopant can be implanted at variousenergy levels, e.g., 40 keV to 50 keV, with doses in the range, e.g.,1×10¹⁵ atoms/cm² to 1.5×10¹⁵ atoms/cm².

FIG. 9 illustrates the next step in the semiconductor manufacturingprocess, namely forming a bit line dielectric layer 960 on thesemiconductor substrate 510. The bit line dielectric layer 960 cancontain any suitable dielectric material such as oxides. Examples ofoxides include high density plasma (HDP) oxide, as well as other oxidedeposition techniques. In one embodiment, the bit line dielectric layercontains the same material as the spacer 880. Excess upper portions ofthe bit line dielectric layer 960 can be removed by any suitabletechnique. For example, the upper portion of the bit line dielectriclayer 960 can be removed by chemical-mechanical polishing (CMP).

The spacer 880 may or may not be removed before forming a bit linedielectric layer 960. In one embodiment, the spacer is not removedbefore forming the bit line dielectric layer 960. When spacer 880 is notremoved, the bit line opening 710 contains at least a portion of thespacer 880. In another embodiment, the spacer 880 is removed beforeforming a bit line dielectric layer. When the spacer 880 is removed, thebit line opening 710 does not contain spacers. For embodiments where thespacer 880 is removed, any suitable technique can be used. For example,the spacer 880 can be removed by etching.

Still referring to FIG. 9, FIG. 9 illustrates the memory device afterremoving the SiRN hard mask 860 and removing an upper portion of the bitline dielectric layer 960, thereby forming a bit line dielectric 950 inthe bit line opening 710. The SiRN hard mask 860 can be removed by anysuitable technique. For example, SiRN hard mask 860 can be removed byany suitable nitride etchant that does not substantially affect ordamage the integrity of other layers in the memory device such as thepoly layer 950. Examples of nitride etchants include phosphoric acid.Other nitride etchants can also be used as long as they are capable ofremoving the SiRN hard mask 860 selective to other layers.

FIG. 10 illustrates the next step in the semiconductor manufacturingprocess, namely forming a word line 1060 on the semiconductor substrate510, thereby forming the desired memory cells. The word line 1060 cancontain any suitable conductive material such as polysilicon. The wordline 1060 can be formed by, for example, forming a layer of word linematerial on the substrate-in-progress and patterning (e.g., etching) thelayer using a deposited hard mask to establish the word line 1060 on thebit lines 970. The bit lines 970 and the word line 1060 can be orientedat substantially right angles relative to one another. Lightly dopeddrain (LDD) spacers (not shown) that separate word lines 1060 are formedby oxide/nitride deposition and an appropriate etch.

FIG. 11 illustrates the next step in the semiconductor manufacturingprocess, namely the initial steps in the formation of the silicided bitline contacts. Bit line oxide 1160 (e.g., high density plasma oxide) isetched using either a blanket wet etch or a wet etch process using amask that opens up the bit line contact area above the bit line implantregion 970. The wet etch can be an oxide wet etch that is highlyselective to nitride. Wen using such a wet etch, the extended foot ofnitride layer 930 remains intact, or in a worst case, is etched only arelatively small amount.

FIG. 12 illustrates the next step in the semiconductor manufacturingprocess, namely the silicide formation in the bit line contact area. Thecontact area is prepared by application of a diluted hydrofluoric acid(DHF). Following the application of DHF, silicide metals (e.g., cobalt,molybdenum, titanium, nickel and the like) are deposited and silicide1270 is formed in the bit line contact area. As FIG. 12 illustrates, thelateral edges of silicide 1270 are defined by the ONO foot nitride layer930. Unreacted silicide metals are removed during a subsequent cleaningstep. No silicide is formed in the bit line area between two word linesdue to the LDD nitride covering. Thereafter, the bit line contact areascan optionally be filled, or partially filled, with an insulatingmaterial (e.g., silicon oxide) to reduce the size of the openings tothese contact areas. Within the filled openings, a hole can be opened(if not already opened) that can be filled with a conductive material(e.g., a metal or metal containing material) to form the vias (notshown) for coupling to external connections.

FIG. 13 illustrates an alternate embodiment, wherein the silicideformation is applied to memory cells with bit line contact areas in theform of a trench. Bit line contact area 1360 is shown with a trench intowhich silicide 1370 is deposited.

In summary, the silicide formation is confined to the required bit linecontact area. The silicide formation cannot extend beyond that area asit is self-aligned to the ONO nitride edges. The extended ONO foot iscreated by the bit line oxide spacer process. The extended ONO footprevents shorting of the silicide to the underlying substrate.

Further, using silicide, bit line contact resistance and variation canbe greatly reduced. The above process also eliminates the need for bitline contact implant and rapid thermal anneal (RTA) process steps,thereby simplifying the overall semiconductor process.

Finally, embodiments of the above invention are equally applicable toembedded flash memory products, integration of high density non-volatilememory, as well as advanced logic processes. Further, embodiments of theabove invention are compatible with nickel silicide logic processbecause no rapid thermal anneal in the contact process is required.

FIG. 14 provides a flowchart of a method 1400 that fabricates a memoryflash memory cell structure with an extended nitride-oxide layer toprevent leakage of silicide bit line contacts, according to anembodiment of the current invention.

The process begins at step 1410. In step 1410, first dielectric layer isformed on substrate. In an exemplary embodiment, first dielectric layer520 is formed on substrate 510.

In step 1420, dielectric charge trapping layer is formed on the firstdielectric layer. In an exemplary embodiment, dielectric charge trappinglayer 530 is formed on first dielectric layer 520.

In step 1430, second dielectric layer is formed on the dielectrictrapping layer. In an exemplary embodiment, second dielectric layer 540is formed on dielectric trapping layer 530.

In step 1440, a gate electrode and a hard mask are deposited. Next, thegate electrode and the hard mask are patterned on the second dielectriclayer. In an exemplary embodiment, gate electrode 350 and hard mask 560,570 are patterned on second dielectric layer 540.

In step 1450, an oxide spacer is formed on the sidewalls of the hardmask to leave exposed a bit line opening. In an exemplary embodiment,oxide spacer 780 is formed on the sidewalls of hard mask 560, 570 toleave exposed a bit line opening 710.

In step 1460, portions of the second dielectric layer, dielectrictrapping layer and first dielectric layer beneath the bit line openingare removed. In an exemplary embodiment, portions of second dielectriclayer 740, dielectric trapping layer 730 and first dielectric layer 720are removed.

In step 1470, portions of the oxide spacer sidewalls and seconddielectric layer are removed thereby form extended portions of thedielectric trapping and the first dielectric layer. In an exemplaryembodiment, portions of oxide spacer sidewalls 880 and second dielectriclayer 840 are removed to thereby form extended portions of dielectrictrapping layer 830 and first dielectric layer 820.

At step 1480, method 1400 ends.

It is to be appreciated that the Detailed Description section, and notthe Summary and Abstract sections, is intended to be used to interpretthe claims. The Summary and Abstract sections may set forth one or morebut not all exemplary embodiments of the current invention ascontemplated by the inventor(s), and thus, are not intended to limit thecurrent invention and the appended claims in any way.

The current invention has been described above with the aid offunctional building blocks illustrating the implementation of specifiedfunctions and relationships thereof. The boundaries of these functionalbuilding blocks have been arbitrarily defined herein for the convenienceof the description. Alternate boundaries can be defined so long as thespecified functions and relationships thereof are appropriatelyperformed.

The foregoing description of the specific embodiments will so fullyreveal the general nature of the invention that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thecurrent invention. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

The breadth and scope of the current invention should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

The claims in the instant application are different than those of theparent application or other related applications. The Applicanttherefore rescinds any disclaimer of claim scope made in the parentapplication or any predecessor application in relation to the instantapplication. The Examiner is therefore advised that any such previousdisclaimer and the cited references that it was made to avoid, may needto be revisited. Further, the Examiner is also reminded that anydisclaimer made in the instant application should not be read into oragainst the parent application.

What is claimed is:
 1. A memory array having a plurality of chargetrapping dielectric memory devices, comprising: a substrate having afirst bit line and a second bit line formed therein and a body regioninterposed between the first and the second bit lines; a firstdielectric layer disposed on the body region; a dielectric chargetrapping layer disposed on the first dielectric layer; and a seconddielectric layer disposed on the dielectric charge trapping layer, thefirst dielectric layer and the dielectric charge trapping layerextending beyond the second dielectric layer in a direction parallel toa top surface of the substrate.
 2. The memory array of claim 1, whereinthe first dielectric layer and the dielectric charge trapping layerextend beyond the body region and over the first bit line and second bitline.
 3. The memory array of claim 1, wherein the first dielectric layercomprises silicon dioxide.
 4. The memory array of claim 1, wherein thedielectric charge trapping layer comprises silicon-rich nitride (SiRN).5. The memory array of claim 1, wherein the second dielectric layercomprises silicon oxide.
 6. The memory array of claim 1, furthercomprising: a bit line contact region disposed above each bit line, thebit line contact region including a metalized portion coupled to therespective bit line.
 7. The memory array of claim 1, wherein themetallized portion comprises a silicide.
 8. The memory array of claim 7,wherein the silicide comprises at least one of titanium silicide, cobaltsilicide and nickel silicide.
 9. A method comprising: disposing a firstdielectric layer on a substrate; disposing a dielectric charge trappinglayer on the first dielectric layer; disposing a second dielectric layeron the dielectric trapping layer; patterning a hard mask on the seconddielectric layer; disposing an oxide spacer on sidewalls of the hardmask to leave exposed a bit line contact region; removing portions ofthe second dielectric layer, dielectric trapping layer and firstdielectric layer beneath the bit line contact region; removing portionsof the oxide space sidewalls to leave exposed a portion of the seconddielectric layer; and removing the exposed portion of the seconddielectric layer to thereby yield extended portions of the dielectrictrapping layer and first dielectric layer.
 10. The method of claim 9,wherein the first dielectric layer comprises silicon dioxide.
 11. Themethod of claim 9, wherein the dielectric charge trapping layercomprises silicon-rich nitride (SiRN).
 12. The method of claim 9,wherein the second dielectric layer comprises silicon oxide.
 13. Themethod of claim 9, further comprising: a bit line contact regiondisposed above each bit line, the bit line contact region including ametalized portion.
 14. The method of claim 13, wherein the metallizedportion comprises a silicide.
 15. The method of claim 14, wherein thesilicide comprises at least one of titanium silicide, cobalt silicideand nickel silicide.
 16. A charge trapping dielectric memory device,comprising: a first dielectric layer disposed on a substrate; adielectric charge trapping layer disposed on the first dielectric layer;and a second dielectric layer disposed on the dielectric charge trappinglayer, the first dielectric layer and the dielectric charge trappinglayer extending beyond the second dielectric layer in a directionparallel to a top surface of the substrate.
 17. The charge trappingdielectric memory device of claim 16, wherein the first dielectric layercomprises silicon dioxide.
 18. The charge trapping dielectric memorydevice of claim 16, wherein the dielectric charge trapping layercomprises silicon-rich nitride (SiRN).
 19. The charge trappingdielectric memory device of claim 16, wherein the second dielectriclayer comprises silicon oxide.
 20. The charge trapping dielectric memorydevice of claim 16, further comprising: a bit line contact regiondisposed above each bit line, the bit line contact region including ametalized portion coupled to the respective bit line.
 21. The chargetrapping dielectric memory device of claim 20, wherein the metallizedportion comprises a silicide.
 22. The charge trapping dielectric memorydevice of claim 21, wherein the silicide comprises at least one oftitanium silicide, cobalt silicide and nickel silicide.